Transactions of the American Institute of Mining, Metallurgical and Petroleum Engineers, Volume 233

activation activation energy alloys aluminum annealing approximately atoms austenite axis calculated carbide carbon coefficient composition constant copper crack creep curves deformation density determined diffusion diodes direction dislocations effect electron epitaxial equation equilibrium etched eutectic experimental ferrite films fraction fracture free energy function furnace germanium grain boundary graphite growth heat heterojunction increase interface iron kcal lattice layer liquid martensitic material matrix measurements melting Member AIME metal nickel niobium nitrogen nucleation observed obtained orientation oxide oxygen parameters particles pct for reproduction phase Phys plane platelets plot pole figure reaction recrystallization Reduced region rolling sample sapphire semiconductor shown in Fig shows silicon silicon dioxide SiO2 solution specimen steel strain stress structure substrate sulfur trioxide surface Table tantalum technique temperature tensile texture thermal thickness tion TRANSACTIONS tungsten ture twinning voltage wt pct wüstite yield zinc